df005s2 - DF10S2 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s2 - DF10S2 rev. 1.0.1 october 2014 df005s2 - DF10S2 bridge rectifier features ? maximum surge rating: i fsm = 85 a i 2 t = 30 a 2 sec ? optimized v f : typical 0.93 v at 2 a, 25c ? df10s socket compatible ? glass passivated junctions ?space saving ? lead free in comply with eu rohs 2002/95/eu directives ? green molding compound: iec61249 halogen free ? qualified with ir reflow and wave soldering ordering information part number top mark package packing method df005s2 df005s2 sdip 4l tape and reel df01s2 df01s2 sdip 4l tape and reel df02s2 df02s2 sdip 4l tape and reel df04s2 df04s2 sdip 4l tape and reel df06s2 df06s2 sdip 4l tape and reel df08s2 df08s2 sdip 4l tape and reel DF10S2 DF10S2 sdip 4l tape and reel description with the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the dfxs2 family sets a new standard in performance. the new design offers an improved surge rating of 85 a. this is especially important when striving to improve reli- ability and increase efficiency. high efficiency designs strive to reduce circuit resistance, which, unfortunately can result in increased inrush surge. as such higher surge current ratings can be required to maintain or improve reliability. the design also offers improved efficiency by achieving a 2 a v f of 1.1 v maximum at 25 c. this lower v f also supports cooler and more efficient operation. finally, the dfxs2 achieves all this in a sdip surface mount form factor, reducing board space and volumetric requirements vs. competitive devices. + - _ _ in out sdip
df005s2 - DF10S2 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s2 - DF10S2 rev. 1.0.1 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. thermal characteristics (1) note: 1. the thermal resistances (r ja & jl ) are characterized with the device mounted on the following fr4 printed circuit boards, as shown in figure 1 and figure 2 pcb size: 76.2 x 114.3 mm. heating effect from adjacent dice is considered and only two dices are powered at the same time. symbol parameter value unit df005s2df01s2df02s2df04s2df06s2df08s2DF10S2 v rrm maximum recurrent peak reverse voltage 50 100 200 400 600 800 1000 v v rms maximum rms bridge input voltage 35 70 140 280 420 560 700 v v dc maximum dc blocking voltage 50 100 200 400 600 800 1000 v i f(av) maximum average forward current t a = 40 c 2.0 a i fsm peak forward surge current 8.3 ms single half-sine wave superimposed on rated load(jedec method) 85 a t stg storage temperature range -55 to +150 c t j operating junction tempera- ture range -55 to +150 c symbol parameter conditions max. unit r ja thermal resistance, junction to ambient single-die measurement (maximum land pattern: 13 x 13 mm) 60 c/w multi-die measurement (maximum land pattern: 13 x 13 mm) 50 multi-die measurement (minimum land pattern: 1.3 x 1.5 mm) 100 jl thermal characterization parameter, junction to lead single-die measurement (maximum and minimum land pattern) 25 c/w figure 1. maximum pads of 2 oz copper figure 2. minimum pads of 2 oz copper f f s s f f s s
df005s2 - DF10S2 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s2 - DF10S2 rev. 1.0.1 3 electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter conditions min. typ. max. unit v f forward voltage drop per bridge element i f = 2.0 a 1.1 v i r dc reverse current at rated dc blocking voltage t j = 25 c3 a t j = 125 c 500 i 2 t rating for fusing (t < 8.3 ms) 30 a 2 s c j junction capacitance v r = 4.0 v, f = 1.0 mhz 23 pf
df005s2 - DF10S2 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s2 - DF10S2 rev. 1.0.1 4 typical performance characteristics figure 3. typical instantaneous forward characteristics figure 4. typical reverse characteristics figure 5. maximum average current vs. ambient temperature figure 6. peak forward surge current vs. number of cycles at 60hz figure 7. typical junction capacitance 0.01 0.1 1 10 0.20.30.40.50.60.70.80.91.01.11.2 t j = -55 o c t j =125 o c t j =150 o c t j =25 o c forward voltage drop, v f [v] forward current, i f [a] 200 400 600 800 1000 1e-3 0.01 0.1 1 10 100 t j =-55 o c t j =150 o c t j =25 o c reverse current, i r [ a] reverse voltage, v r [v] t j =125 o c 40 60 80 100 120 140 160 180 200 0.0 0.5 1.0 1.5 2.0 max pad (sigle die) average current [dc] ambient temperature [ o c] 0 20406080100 0 10 20 30 40 50 60 70 80 90 100 i fsm , peak forward surge current [a] number of cycles at 60 hz 0 1020304050 0 5 10 15 20 25 30 35 40 f = 1 mhz juntion capacitance, c j [pf] reverse voltage, v r [v]
df005s2 - DF10S2 ? bridge rectifier ? 2014 fairchild semiconductor corporation www.fairchildsemi.com df005s2 - DF10S2 rev. 1.0.1 5 physical dimensions figure 8. 4-lead, sdip, 6.5 mm wide 1.30 1.50 5.10 10.40 1.12 2.60 2.20 8.510 8.050 chamfer optional 5.200 5.000 1.200 0.890 6.500 6.200 10.300 9.400 12 3 4 pin1 id optional 1.530 1.020 1.000 0.028 0.330 0.220 7.874 7.370 notes: a. this package does not conform to any reference standard. b. all dimensions are in millimeters. c. dimensions are exclusive of burrs, mold flash and tie bar protrusions. g. drawing file name: mkt-sdip04arev4. top view side view end view land pattern recommendation
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